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HN58X2508I HN58X2516I
Serial Peripheral Interface 8k EEPROM (1024-word x 8-bit) 16k EEPROM (2048-word x 8-bit) Electrically Erasable and Programmable Read Only Memory
REJ03C0222-0200 Rev.2.00 Aug.19.2004
Description
HN58X25xxx Series is the Serial Peripheral Interface (SPI) EEPROM (Electrically Erasable and Programmable ROM). It realizes high speed, low power consumption and a high level of reliability by employing advanced MONOS memory technology and CMOS process and low voltage circuitry technology. It also has a 32-byte page programming function to make it's write operation faster. Note: Renesas Technology's serial EEPROM are authorized for using consumer applications such as cellular phones, camcorders, audio equipments. Therefore, please contact Renesas Technology's sales office before using industrial applications such as automotive systems, embedded controllers, and meters.
Rev.2.00, Aug.19.2004, page 1 of 27
HN58X2508I/HN58X2516I
Features
* Single supply: 1.8 V to 5.5 V * Serial peripheral interface (SPI bus) SPI mode 0 (0,0), 3 (1,1) * Clock frequency: 5 MHz (2.5 V to 5.5 V), 3 MHz (1.8 V to 5.5 V) * Power dissipation: Standby: 3 A (max) Active (Read): 2.5 mA (max) Active (Write): 3.0 mA (max) * Automatic page write: 32-byte/page * Write cycle time: 5 ms (2.5 V min), 8 ms (1.8 V min) * Endurance: 105 Cycles * Data retention: 10 Years * Small size packages: SOP-8pin, TSSOP-8pin * Shipping tape and reel TSSOP-8pin: 3,000 IC/reel SOP-8pin : 2,500 IC/reel * Temperature range: -40 to +85 C * Lead free product.
Ordering Information
Type No. HN58X2508FPIE HN58X2516FPIE HN58X2508TIE HN58X2516TIE Internal organization 8-kbit (1024 x 8-bit) 16-kbit (2048 x 8-bit) 8-kbit (1024 x 8-bit) 16-kbit (2048 x 8-bit) 1.8 V to 5.5 V Operating voltage 1.8 V to 5.5 V Frequency 5 MHz (2.5 V to 5.5 V) 3 MHz (1.8 V to 5.5V) 5 MHz (2.5 V to 5.5 V) 3 MHz (1.8 V to 5.5 V) Package 150mil 8-pin plastic SOP (FP-8DBV) Lead free 8-pin plastic TSSOP (TTP-8DAV) Lead free
Rev.2.00, Aug.19.2004, page 2 of 27
HN58X2508I/HN58X2516I
Pin Arrangement
8-pin SOP/TSSOP
S Q W VSS 1 2 3 4 8 7 6 5 VCC HOLD C D
(Top view)
Pin Description
Pin name C D Q S W HOLD VCC VSS Function Serial clock Serial data input Serial data output Chip select Write protect Hold Supply voltage Ground
Rev.2.00, Aug.19.2004, page 3 of 27
HN58X2508I/HN58X2516I
Block Diagram
High voltage generator VCC VSS
Address generator
X decoder
W C HOLD D Q
Control logic
S
Memory array
Y decoder
Y-select & Sense amp.
Serial-parallel converter
Rev.2.00, Aug.19.2004, page 4 of 27
HN58X2508I/HN58X2516I
Absolute Maximum Ratings
Parameter Supply voltage relative to VSS Input voltage relative to VSS Operating temperature range* Storage temperature range
1
Symbol VCC VIN Topr Tstg
Value -0.6 to + 7.0 -0.5*2 to +7.0*3 -40 to +85 -65 to +125
Unit V V C C
Notes: 1. Including electrical characteristics and data retention. 2. VIN (min): -3.0 V for pulse width 50 ns. 3. Should not exceed VCC + 1.0 V.
DC Operating Conditions
Parameter Supply voltage Input voltage Operating temperature range Symbol VCC VSS VIH VIL Topr Min 1.8 0 VCC x 0.7 -0.3* -40
1
Typ 0
Max 5.5 0 VCC + 0.5* VCC x 0.3 +85
2
Unit V V V V C
Notes: 1. VIN (min): -1.0 V for pulse width 50 ns. 2. VIN (max): VCC + 1.0 V for pulse width 50 ns.
Rev.2.00, Aug.19.2004, page 5 of 27
HN58X2508I/HN58X2516I
DC Characteristics
Parameter Input leakage current Output leakage current Symbol ILI ILO Min Max 2 2 Unit A A Test conditions VCC = 5.5 V, VIN = 0 to 5.5 V (S, D, C, HOLD, W) VCC = 5.5 V, VOUT = 0 to 5.5 V (Q) VIN = VSS or VCC, VCC = 5.5 V VCC = 3.6 V, Read at 5 MHz VIN = VCC x 0.1/VCC x 0.9 Q = OPEN VCC = 5.5 V, Read at 5 MHz VIN = VCC x 0.1/VCC x 0.9 Q = OPEN VCC = 3.6 V, Write at 5 MHz VIN = VCC x 0.1/VCC x 0.9 VCC = 5.5 V, Write at 5 MHz VIN = VCC x 0.1/VCC x 0.9 VCC = 5.5 V, IOL = 2 mA VCC = 2.5 V, IOL = 1.5 mA VCC = 5.5 V, IOL = -2 mA VCC = 2.5 V, IOL = -0.4 mA
VCC current
Standby Active
ISB ICC1

3 2
A mA
2.5
mA
ICC2

2 3.0 0.4 0.4
mA mA V V V V
Output voltage
VOL1 VOL2 VOH1 VOH2
VCC x 0.8 VCC x 0.8
Rev.2.00, Aug.19.2004, page 6 of 27
HN58X2508I/HN58X2516I
AC Characteristics
Test Conditions Input pules levels: VIL = VCC x 0.2 VIH = VCC x 0.8 Input rise and fall time: 10 ns Input and output timing reference levels: VCC x 0.3, VCC x 0.7 Output reference levels: VCC x 0.5 Output load: 100 pF
Rev.2.00, Aug.19.2004, page 7 of 27
HN58X2508I/HN58X2516I (Ta = -40 to +85C, VCC = 2.5 V to 5.5 V)
Parameter Clock frequency S active setup time S not active setup time S deselect time S active hold time S not active hold time Clock high time Clock low time Clock rise time Clock fall time Data in setup time Data in hold time Clock low hold time after HOLD not active Clock high setup time before HOLD active Symbol fC tSLCH tSHCH tSHSL tCHSH tCHSL tCH tCL tCLCH tCHCL tDVCH tCHDX tHHCH Alt fSCK tCSS1 tCSS2 tCS tCSH -- tCLH tCLL tRC tFC tDSU tDH tDIS tV tHO tRO tFO tLZ tHZ tWC Min 90 90 90 90 90 90 90 20 30 70 40 60 60 0 Max 5 1 1 100 70 50 50 50 100 5 Unit MHz ns ns ns ns ns ns ns s s ns ns ns ns ns ns ns ns ns ns ns ns ns ms 2 2 2 2 2 1 1 2 2 Notes
Clock low hold time after HOLD active tHLCH tCHHL
Clock high setup time before HOLD not tCHHH active Output disable time Clock low to output valid Output hold time Output rise time Output fall time HOLD high to output low-Z HOLD low to output high-Z Write time tSHQZ tCLQV tCLQX tQLQH tQHQL tHHQX tHLQZ tW
Notes: 1. tCH + tCL 1/fC 2. Value guaranteed by characterization, not 100% tested in production.
Rev.2.00, Aug.19.2004, page 8 of 27
HN58X2508I/HN58X2516I (Ta = -40 to +85C, VCC = 1.8 V to 5.5 V)
Parameter Clock frequency S active setup time S not active setup time S deselect time S active hold time S not active hold time Clock high time Clock low time Clock rise time Clock fall time Data in setup time Data in hold time Clock low hold time after HOLD not active Clock high setup time before HOLD active Symbol fC tSLCH tSHCH tSHSL tCHSH tCHSL tCH tCL tCLCH tCHCL tDVCH tCHDX tHHCH Alt fSCK tCSS1 tCSS2 tCS tCSH tCLH tCLL tRC tFC tDSU tDH tDIS tV tHO tRO tFO tLZ tHZ tWC Min 100 100 150 100 100 150 150 30 50 140 90 120 120 0 Max 3 1 1 200 120 100 100 100 100 8 Unit MHz ns ns ns ns ns ns ns s s ns ns ns ns ns ns ns ns ns ns ns ns ns ms 2 2 2 2 2 1 1 2 2 Notes
Clock low hold time after HOLD active tHLCH tCHHL
Clock high setup time before HOLD not tCHHH active Output disable time Clock low to output valid Output hold time Output rise time Output fall time HOLD high to output low-Z HOLD low to output high-Z Write time tSHQZ tCLQV tCLQX tQLQH tQHQL tHHQX tHLQZ tW
Notes: 1. tCH + tCL 1/fC 2. Value guaranteed by characterization, not 100% tested in production.
Rev.2.00, Aug.19.2004, page 9 of 27
HN58X2508I/HN58X2516I
Timing Waveforms
Serial Input Timing
tSHSL
S
tCHSL tSLCH tCHSH
tSHCH
C
tDVCH tCHDX tCLCH LSB IN tCHCL
D
MSB IN
Q
High Impedance
Hold Timing
S
tHLCH tCHHL tHHCH
C
tCHHH
D
tHLQZ tHHQX
Q HOLD
Rev.2.00, Aug.19.2004, page 10 of 27
HN58X2508I/HN58X2516I Output Timing
S
tCH tSHQZ
C
tCL
D
ADDR LSB IN
tCLQV tCLQX
tCLQX
tCLQV
Q
LSB OUT
tQLQH tQHQL
Rev.2.00, Aug.19.2004, page 11 of 27
HN58X2508I/HN58X2516I
Pin Function
Serial data output (Q) This output signal is used to transfer data serially out of the device. Data is shifted out on the falling edge of serial clock (C). Serial data input (D) This input signal is used to transfer data serially into the device. It receives instructions, addresses, and the data to be written. Values are latched on the rising edge of serial clock (C). Serial clock (C) This input signal provides the timing of the serial interface. Instructions, addresses, or data present at serial data input (D) are latched on the rising edge of serial clock (C). Data on serial data output (Q) changes after the falling edge of serial clock (C). Chip select (S) When this input signal is high, the device is deselected and serial data output (Q) is at high impedance. Unless an internal write cycle is in progress, the device will be in the standby mode. Driving chip select (S) low enables the device, placing it in the active power mode. After power-up, a falling edge on chip select (S) is required prior to the start of any instruction. Hold (HOLD) The hold (HOLD) signal is used to pause any serial communications with the device without deselecting the device. During the hold condition, the serial data output (Q) is high impedance, and serial data input (D) and serial clock (C) are don't care. To start the hold condition, the device must be selected, with chip select (S) driven low. Write protect (W) The main purpose of this input signal is to freeze the size of the area of memory that is protected against write instructions (as specified by the values in the BP1 and BP0 bits of the status register). This pin must be driven either high or low, and must be stable during all write operations.
Rev.2.00, Aug.19.2004, page 12 of 27
HN58X2508I/HN58X2516I
Functional Description
Status Register The following figure shows the Status Register Format. The Status Register contains a number of status and control bits that can be read or set (as appropriate) by specific instructions. Status Register Format
b7
SRWD 0 0 0 BP1 BP0 WEL
b0
WIP
Status Register Write Disable Block Protect Bits Write Enable Latch Bits Write In Progress Bits
WIP bit: The Write In Progress (WIP) bit indicates whether the memory is busy with a Write or Write Status Register cycle. WEL bit: The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch. BP1, BP0 bits: The Block Protect (BP1, BP0) bits are non-volatile. They define the size of the area to be software protected against Write instructions. SRWD bit: The Status Register Write Disable (SRWD) bit is operated in conjunction with the write protect (W) signal. The Status Register Write Disable (SRWD) bit and write protect (W) signal allow the device to be put in the Hardware Protected mode. In this mode, the non-volatile bits of the Status Register (SRWD, BP1, BP0) become read-only bits. Instructions Each instruction starts with a single-byte code, as summarized in the following table . If an invalid instruction is sent (one not contained in the following table), the device automatically deselects itself.
Rev.2.00, Aug.19.2004, page 13 of 27
HN58X2508I/HN58X2516I Instruction Set
Instruction WREN WRDI RDSR WRSR READ WRITE Description Write Enable Write Disable Read Status Register Write Status Register Read from Memory Array Write to Memory Array Instruction Format 0000 0110 0000 0100 0000 0101 0000 0001 0000 0011 0000 0010
Write Enable (WREN): The Write Enable Latch (WEL) bit must be set prior to each WRITE and WRSR instruction. The only way to do this is to send a Write Enable instruction to the device. As shown in the following figure, to send this instruction to the device, chip select (S) is driven low, and the bits of the instruction byte are shifted in, on serial data input (D). The device then enters a wait state. It waits for the device to be deselected, by chip select (S) being driven high. Write Enable (WREN) Sequence
VIH VIL
S
W
VIH VIL 0 1 2 3 4 5 6 7
C
VIH VIL Instruction
VIH
D
VIL
Q
High-Z
Rev.2.00, Aug.19.2004, page 14 of 27
HN58X2508I/HN58X2516I Write Disable (WRDI): One way of resetting the Write Enable Latch (WEL) bit is to send a Write Disable instruction to the device. As shown in the following figure, to send this instruction to the device, chip select (S) is driven low, and the bits of the instruction byte are shifted in, on serial data input (D). The device then enters a wait state. It waits for the device to be deselected, by chip select (S) being driven high. The Write Enable Latch (WEL) bit, in fact, becomes reset by any of the following events: Power-up WRDI instruction execution WRSR instruction completion WRITE instruction completion
Write Disable (WRDI) Sequence
VIH VIL
S
W
VIH VIL 0 1 2 3 4 5 6 7
C
VIH VIL Instruction
VIH
D
VIL
Q
High-Z
Rev.2.00, Aug.19.2004, page 15 of 27
HN58X2508I/HN58X2516I Read Status Register(RDSR): The Read Status Register (RDSR) instruction allows the Status Register to be read. The Status Register may be read at any time, even while a Write or Write Status Register cycle is in progress. When one of these cycles is in progress, it is recommended to check the Write In Progress (WIP) bit before sending a new instruction to the device. It is also possible to read the Status Register continuously, as shown in the following figure. Read Status Register (RDSR) Sequence
VIH VIL
S
W
VIH VIL 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
C
VIH VIL
VIH
D
VIL Status Register Out
Q
High-Z 7 6 5 4 3 2 1 0 7
The status and control bits of the Status Register are as follows: WIP bit: The Write In Progress (WIP) bit indicates whether the memory is busy with a Write or Write Status Register cycle. When set to 1, such a cycle is in progress. When reset to 0, no such cycles are in progress. WEL bit: The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch. When set to 1, the internal Write Enable Latch is set. When set to 0, the internal Write Enable Latch is reset and no Write or Write Status Register instructions are accepted. BP1, BP0 bits: The Block Protect (BP1, BP0) bits are non-volatile. They define the size of the area to be software protected against Write instructions. These bits are written with the Write Status Register (WRSR) instruction. When one or both of the Block Protect (BP1, BP0) bits are set to 1, the relevant memory area (as defined in the Status Register Format table) becomes protected against Write (WRITE) instructions. The Block Protect (BP1, BP0) bits can be written provided that the Hardware Protected mode has not been set.
Rev.2.00, Aug.19.2004, page 16 of 27
HN58X2508I/HN58X2516I SRWD bit: The Status Register Write Disable (SRWD) bit is operated in conjunction with the write protect (W) signal. The Status Register Write Disable (SRWD) bit and write protect (W) signal allows the device to be put in the Hardware Protected mode (When the Status Register Write Disable (SRWD) bit is set to 1, and write protect (W) signal is driven low). In this mode, the non-volatile bits of the Status Register (SRWD, BP1, BP0) become read-only bits and the Write Status Register (WRSR) instruction is no longer accepted for execution. Write Status Register (WRSR): The Write Status Register (WRSR) instruction allows new values to be written to the Status Register. Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction has been decoded and executed, the device sets the Write Enable Latch(WEL). The instruction sequence is shown in the following figure. The Write Status Register (WRSR) instruction has no effect on b6, b5, b4, b1 and b0 of the Status Register. b6, b5 and b4 are always read as 0. Chip select (S) must be driven high after the rising edge of serial clock (C) that latches in the eighth bit of the data byte, and before the next rising edge of serial clock (C). Otherwise, the Write Status Register (WRSR) instruction is not executed. As soon as chip select (S) is driven high, the self-timed Write Status Register cycle (whose duration is tW) is initiated. While the Write Status Register cycle is in progress, the Status Register may still be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed. When the cycle is completed, Write Enable Latch(WEL) is reset. The Write Status Register (WRSR) instruction allows the user to change the values of the Block Protect (BP1, BP0) bits, to define the size of the area that is to be treated as read-only, as defined in the Status Register Format table. The Write Status Register (WRSR) instruction also allows the user to set or reset the Status Register Write Disable (SRWD) bit in accordance with the write protect (W) signal. The Status Register Write Disable (SRWD) bit and write protect (W) signal allows the device to be put in the Hardware Protected Mode (HPM). The Write Status Register (WRSR) instruction is not executed once the Hardware Protected Mode (HPM) is entered. The contents of the Status Register Write Disable (SRWD) and Block Protect (BP1, BP0) bits are frozen at their current values just before the start of the execution of the Write Status Register (WRSR) instruction. The new, updated values take effect at the moment of completion of the execution of Write Status Register (WRSR) instruction.
Rev.2.00, Aug.19.2004, page 17 of 27
HN58X2508I/HN58X2516I Write Status Register (WRSR) Sequence
VIH VIL
S
W
VIH VIL 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
C
VIH VIL Status Register In VIH 7 MSB 6 5 4 3 2 1 0
D
VIL
Q
High-Z
Rev.2.00, Aug.19.2004, page 18 of 27
HN58X2508I/HN58X2516I Read from Memory Array (READ): As shown in the following figure, to send this instruction to the device, chip select (S) is first driven low. The bits of the instruction byte and the address bytes are then shifted in, on serial data input (D). The addresses are loaded into an internal address register, and the byte of data at that address is shifted out, on serial data output (Q). If chip select (S) continues to be driven low, the internal address register is automatically incremented, and the byte of data at the new address is shifted out. When the highest address is reached, the address counter rolls over to zero, allowing the Read cycle to be continued indefinitely. The whole memory can, therefore, be read with a single READ instruction. The Read cycle is terminated by driving chip select (S) high. The rising edge of the chip select (S) signal can occur at any time during the cycle. The addressed first byte can be any byte within any page. The instruction is not accepted, and is not executed, if a Write cycle is currently in progress. Read from Memory Array (READ) Sequence
VIH VIL
S
W
VIH VIL 0 1 2 3 4 5 6 7 8 9 10 20 21 22 23 24 25 26 27 28 29 30 31
C
VIH VIL
Instruction VIH
16-Bit Address
D
A15 A14 A13
A3 A2 A1
A0
VIL Data Out 1 Data Out 2 2 1 0 7
Q
High-Z 7 6 5 4 3
Note:
1. Depending on the memory size, as shown in the following table, the most significant address bits are don't care.
Address Range Bits
Device Address bits HN58X2516I A10 to A0 HN58X2508I A9 to A0
Notes: 1. b15-b11 are don't care on the HN58X2516 2. b15-b10 are don't care on the HN58X2508
Rev.2.00, Aug.19.2004, page 19 of 27
HN58X2508I/HN58X2516I Write to Memory Array (WRITE): As shown in the following figure, to send this instruction to the device, chip select (S) is first driven low. The bits of the instruction byte, address byte, and at least one data byte are then shifted in, on serial data input (D). The instruction is terminated by driving chip select (S) high at a byte boundary of the input data. In the case of the following figure, this occurs after the eighth bit of the data byte has been latched in, indicating that the instruction is being used to write a single byte. The self-timed Write cycle starts, and continues for a period tWC (as specified in AC Characteristics). At the end of the cycle, the Write In Progress (WIP) bit is reset to 0. If, though, chip select (S) continues to be driven low, as shown in the following figure, the next byte of the input data is shifted in, so that more than a single byte, starting from the given address towards the end of the same page, can be written in a single internal Write cycle. Each time a new data byte is shifted in, the least significant bits of the internal address counter are incremented. If the number of data bytes sent to the device exceeds the page boundary, the internal address counter rolls over to the beginning of the page, and the previous data there are overwritten with the incoming data. (The page size of these device is 32 bytes). The instruction is not accepted, and is not executed, under the following conditions: If the Write Enable Latch (WEL) bit has not been set to 1 (by executing a Write Enable instruction just before) If a Write cycle is already in progress If the addressed page is in the region protected by the Block Protect (BP1 and BP0) bits. Byte Write (WRITE) Sequence (1 Byte)
VIH VIL
S
W
VIH VIL 0 1 2 3 4 5 6 7 8 9 10 20 21 22 23 24 25 26 27 28 29 30 31
C
VIH VIL
Instruction VIH
16-Bit Address
Data Byte 1
D
15 14 13
3
2
1
0
7
6
5
4
3
2
1
0
VIL
Q
High-Z
Note:
1. Depending on the memory size, as shown in Address Range Bits table, the most significant address bits are don't care.
Rev.2.00, Aug.19.2004, page 20 of 27
HN58X2508I/HN58X2516I Byte Write (WRITE) Sequence (Page)
VIH VIL
S
W
VIH VIL 0 1 2 3 4 5 6 7 8 9 10 20 21 22 23 24 25 26 27 28 29 30 31
C
VIH VIL
Instruction VIH
16-Bit Address
Data Byte 1
D
15 14 13
3
2
1
0
7
6
5
4
3
2
1
0
VIL
Q
High-Z
S
VIH VIL
W
VIH VIL 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
C
VIH VIL
Data Byte 2
Data Byte 3
Data Byte N
D
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Q
High-Z
Note:
1. Depending on the memory size, as shown in Address Range Bits table, the most significant address bits are don't care.
Rev.2.00, Aug.19.2004, page 21 of 27
HN58X2508I/HN58X2516I
Data Protect
The protection features of the device are summarized in the following table. When the Status Register Write Disable (SRWD) bit of the Status Register is 0 (its initial delivery state), it is possible to write to the Status Register provided that the Write Enable Latch (WEL) bit has previously been set by a Write Enable (WREN) instruction, regardless weather write protect (W) is driven high or low. When the Status Register Write Disable (SRWD) bit of the Status Register is set to 1, two cases need to be considered, depending on the state of write protect (W): If write protect (W) is driven high, it is possible to write to the Status Register provided that the Write Enable Latch (WEL) bit has previously been set by a Write Enable (WREN) instruction. If write protect (W) is driven low, it is not possible to write to the Status Register even if the Write Enable Latch (WEL) bit has previously been set by a Write Enable (WREN) instruction. (Attempts to write to the Status Register are rejected, and are not accepted for execution). As a consequence, all the data bytes in the memory area that are software protected (SPM) by the Block Protect (BP1, BP0) bits of the Status Register, are also hardware protected against data modification. Regardless of the order of the two events, the Hardware Protected Mode (HPM) can be entered: By setting the Status Register Write Disable (SRWD) bit after driving write protect (W) low. By driving write protect (W) low after setting the Status Register Write Disable (SRWD) bit. The only way to exit the Hardware Protected Mode (HPM) once entered is to pull write protect (W) high. If write protect (W) is permanently tied high, the Hardware Protected Mode (HPM) can never be activated, and only the Software Protected Mode (SPM), using the Block Protect (BP1, BP0) bits of the Status Register, can be used.
Write Protected Block Size
Status register bits BP1 0 0 1 1 BP0 0 1 0 1 Protected blocks None Upper quarter Upper half Whole memory Array addresses protected HN58X2516I None 600h - 7FFh 400h - 7FFh 000h - 7FFh HN58X2508I None 300h - 3FFh 200h - 3FFh 000h - 3FFh
Rev.2.00, Aug.19.2004, page 22 of 27
HN58X2508I/HN58X2516I Protection Modes
Memory protect W signal 1 SRWD bit 0 Mode Software protected (SPM) Write protection of the status register Protected area*
1
Unprotected area*1 Ready to accept Write instructions
Status register is Write protected writable (if the WREN) instruction has set the WEL bit). The values in the BP1 and BP0 bits can be changed.
0 1 0
0 1 1 Hardware protected (HPM) Status register is Write protected hardware write protected. The values in the BP1 and BP0 bits cannot be changed. Ready to accept Write instructions
Note:
1. As defined by the values in the Block Protected (BP1, BP0) bits of the Status Register, as shown in the former table.
Rev.2.00, Aug.19.2004, page 23 of 27
HN58X2508I/HN58X2516I
Hold Condition
The hold (HOLD) signal is used to pause any serial communications with the device without resetting the clocking sequence. During the hold condition, the serial data output (Q) is high impedance, and serial data input (D) and serial clock (C) are don't care. To enter the hold condition, the device must be selected, with chip select (S) low. Normally, the device is kept selected, for the whole duration of the hold condition. Deselecting the device while it is in the hold condition, has the effect of resetting the state of the device, and this mechanism can be used if it is required to reset any processes that had been in progress. The hold condition starts when the hold (HOLD) signal is driven low at the same time as serial clock (C) already being low (as shown in the following figure). The hold condition ends when the hold (HOLD) signal is driven high at the same time as serial clock (C) already being low. The following figure also shows what happens if the rising and falling edges are not timed to coincide with serial clock (C) being low. Hold Condition Activation
HOLD status HOLD status
C HOLD
Rev.2.00, Aug.19.2004, page 24 of 27
HN58X2508I/HN58X2516I
Notes
Data Protection at VCC On/Off When VCC is turned on or off, noise on S inputs generated by external circuits (CPU, etc) may act as a trigger and turn the EEPROM to unintentional program mode. To prevent this unintentional programming, this EEPROM have a power on reset function. Be careful of the notices described below in order for the power on reset function to operate correctly. * S should be fixed to VCC during VCC on/off. Low to high or high to low transition during VCC on/off may cause the trigger for the unintentional programming. * VCC should be turned on/off after the EEPROM is placed in a standby state. * VCC should be turned on from the ground level (VSS) in order for the EEPROM not to enter the unintentional programming mode. * VCC turn on speed should be slower than 10 s/V. * When WRSR or WRITE instruction is executed before VCC turns off, VCC should be turned off after waiting write cycle time (tW).
Rev.2.00, Aug.19.2004, page 25 of 27
HN58X2508I/HN58X2516I
Package Dimensions
HN58X2508FPIE/HN58X2516FPIE (FP-8DBV)
Unit: mm
4.89 5.15 Max 5 8
1
4
3.90 1.73 Max
*0.20 0.05
6.02 0.18 1.06
0.69 Max
0 - 8
0.289 0.60 + 0.194 -
1.27 *0.40 0.05
0.114 0.14 + 0.038 -
0.10 0.25 M
Package Code JEDEC JEITA Mass (reference value) FP-8DBV -- -- 0.08 g
*Pd Plating
Rev.2.00, Aug.19.2004, page 26 of 27
HN58X2508I/HN58X2516I HN58X2508TIE/HN58X2516TIE (TTP-8DAV)
Unit: mm
3.00 3.30 Max 8 5
1
4 0.65 1.00 0.13 M 6.40 0.20 0.805 Max 0 - 8 0.50 0.10
*0.20 0.05
4.40
*0.15 0.05
1.10 Max
0.10
0.07 +0.03 -0.04
*Pd Plating
Package Code JEDEC JEITA Mass (reference value)
TTP-8DAV -- -- 0.034 g
Rev.2.00, Aug.19.2004, page 27 of 27
Revision History
Rev. Date
HN58X2508I/HN58X2516I Data Sheet
Contents of Modification Page Description Initial issue TTP-8DV to TTP-8DAV
1.00 2.00
Jul.23.2004 Aug.19.2004
26-27 Package Dimensions: Change of Dimensions
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
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